InGaN-based multi-quantum-well-structure laser diodes
InGaN-based multi-quantum-well-structure laser diodes
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DOI：
10.1143/jjap.35.l74
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发表时间：
1996-01-15
期刊：
影响因子：
--
通讯作者：
Sugimoto, Y
中科院分区：
文献类型：
--
作者：
Nakamura, S;Senoh, M;Sugimoto, Y
采用金属有机化学气相沉积法在蓝宝石衬底上生长了以Ⅲ-Ⅴ族氮化物为衬底的InGaN多量子阱（MQW）结构激光二极管（LD）。激光腔的镜面是通过蚀刻III-V族氮化物膜而形成的。作为有源层，使用InGaN MQW结构。InGaN多量子阱LD在正向电流为2.3 A时产生215 mW，在室温下脉冲电流注入下，在417 nm处具有半峰全宽为1.6 nm的光输出尖峰。激光阈值电流密度为4kA/cm ~ 2。发射波长是半导体激光二极管产生的最短波长。
InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward current of 2.3 A, with a sharp peak of light output at 417 nm that had a full width at half-maximum of 1.6 nm under the pulsed current injection at room temperature. The laser threshold current density was 4 kA/cm(2). The emission wavelength is the shortest one ever generated by a semiconductor laser diode.