Growth and Characterization of ZnCdSe/BeZnTe II–VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices
Growth and Characterization of ZnCdSe/BeZnTe II–VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices
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InP 衬底上 ZnCdSe/BeZnTe II-VI 化合物 II 型超晶格的生长和表征及其在可见光发射器件中的应用
DOI：
10.1143/jjap.40.6747
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发表时间：
2001
影响因子：
1.5
通讯作者：
K. Kishino
中科院分区：
文献类型：
--
作者：
S. Che;I. Nomura;T. Takada;A. Kikuchi;K. Shimomura;K. Kishino
首次采用分子束外延技术在InP衬底上生长了ZnCdSe/BeZnTe Ⅱ-Ⅵ族化合物超晶格。在X射线衍射研究中，每个样品都观察到明确的卫星峰，这表明获得了精细的周期性SL结构。对于具有几种层厚度组合的SL样品，在15 K的光致发光（PL）研究期间观察到从740至507 nm的宽范围可见光发射。比较了ZnCdSe/BeZnTe SL和ZnCdSe体样品在15 K下的PL发射特性，结果表明SL样品具有较好的上级发射强度。制备了由ZnCdSe/BeZnTe超晶格和BeZnTe包层组成的双异质结结构。在15 K下DH样品的PL谱中，观察到在517和604 nm处的尖锐发射峰。采用ZnCdSe/BeZnTe SL作为有源层制备了可见光发光二极管，并在室温下进行了脉冲电流注入测试。在562 nm处有黄绿色的单发射峰。
ZnCdSe/BeZnTe II–VI compound superlattices (SLs) were grown on InP substrates by molecular beam epitaxy for the first time. In the X-ray diffraction studies, definite satellite peaks were observed for each sample, which indicates that fine periodic SL structures were obtained. For SL samples with several layer thickness combinations, wide-range visible emissions from 740 to 507 nm were observed during photoluminescence (PL) studies at 15 K. Comparison of PL emission properties at 15 K for a ZnCdSe/BeZnTe SL and ZnCdSe bulk samples showed the superior emission intensity of the SL sample. A double hetero-structure (DH) consisting of ZnCdSe/BeZnTe SLs and BeZnTe cladding layers was fabricated. In the PL spectrum of the DH sample at 15 K, sharp emission peaks at 517 and 604 nm were observed. Visible light emitting diodes were fabricated by applying ZnCdSe/BeZnTe SLs as the active layer, and were evaluated under pulsed current injections at room temperature. A single-peak yellow-green emission around 562 nm was obtained.