Incommensurate phase of Te adsorbed on (001) GaAs.
Incommensurate phase of Te adsorbed on (001) GaAs.
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DOI：
10.1103/physrevb.39.12047
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发表时间：
1989-06
期刊：
影响因子：
--
通讯作者：
Cibert;Saminadayar;Tatarenko;Gobil
中科院分区：
文献类型：
--
作者：
Cibert;Saminadayar;Tatarenko;Gobil
本文报道了Te在富Ga（001）GaAs表面上的吸附过程中出现的公度相和非公度相。直接通过X射线光电子能谱测量的Te覆盖率，和无公度相的详细研究作为Te覆盖率的函数;两个制度证明，一个在低覆盖率的Te主要是绑定到Ga，和另一个在高覆盖率的Te主要绑定到作为也存在。
Occurrence of commensurate and incommensurate phases is reported for adsorption of Te on Ga-rich (001) GaAs surfaces. The Te coverage is measured directly through x-ray photoelectron spectroscopy, and the incommensurate phase is studied in detail as a function of Te coverage; two regimes are demonstrated, one at low coverage where Te is mainly bound to Ga, and another one at high coverage where Te mainly bound to As is also present.