Probing of the electric field distribution in organic field effect transistor channel by microscopic second-harmonic generation
Probing of the electric field distribution in organic field effect transistor channel by microscopic second-harmonic generation
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DOI：
10.1063/1.2335370
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发表时间：
2006-08-14
影响因子：
4
通讯作者：
Iwamoto, Mitsumasa
中科院分区：
文献类型：
--
作者：
Manaka, Takaaki;Lim, Eunju;Iwamoto, Mitsumasa
利用显微光学二次谐波（SHG）技术成功地探测了并五苯场效应晶体管（FET）沟道中的电场分布。通过沿沿着源漏方向扫描一个光斑位置，在沟道中的各个点处获得微点SHG信号。对于处于关断状态的FET，观察到增强的SHG信号，表明反映器件几何形状的拉普拉斯场形成。这清楚地支持并五苯层在关闭状态下的绝缘性质。在接通FET之后，SHG轮廓急剧改变，这表明由于载流子注入而在沟道中形成空间电荷导致的场分布的改变。(c)2006年，美国物理学会。
Electric field distribution in channel of pentacene field effect transistor (FET) was successfully probed by microscopic optical second-harmonic generation (SHG) observation. Microspot SHG signals were acquired at various points in the channel with scanning a spot position along source-drain direction. For the FET at off state, enhanced SHG signal was observed, indicating the Laplace field formation reflecting the device geometry. This clearly supports the insulating nature of pentacene layer at off state. After turning on the FET, SHG profile changed drastically, indicating change in the field distribution by the space charge formation in the channel due to the carrier injection. (c) 2006 American Institute of Physics.