Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers
Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers
复制标题
润湿层态对量子点激光器增益电流特性影响的实验研究
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
M. Hopkinson
中科院分区：
文献类型：
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作者：
D. Matthews;H. Summers;P. Smowton;M. Hopkinson
通过对 InGaAs 量子点激光器中增益电流特性随温度变化的实验测量，我们证明了润湿层态的布居导致了点态布居反转的饱和，从而导致了量子点激光器增益的饱和。在 300 K 时，三层结构的最大模态增益从 53 cm−1 降低至 14 cm−1。
Using experimental measurements of the gain–current characteristic as a function of temperature in InGaAs quantum-dot lasers, we demonstrate that it is the population of wetting-layer states that leads to a saturation of the population inversion in dot states and hence to the saturation of gain in a quantum-dot laser. At 300 K, the maximum modal gain for a three-layer structure is reduced from 53 to 14 cm−1.