Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate
Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate
复制标题
由于衬底的 Si 污染，导致 Si 上 Ta2O5 薄膜漏电流的缺陷态
DOI：
10.1063/1.362510
复制
发表时间：
1996
影响因子：
3.2
通讯作者：
P. Chu
中科院分区：
文献类型：
--
作者：
W. Lau;K. K. Khaw;P. Qian;N. Sandler;P. Chu
用一种新的零偏压热刺激电流谱技术发现，Ta_2O_5沉积后在氧气中退火后存在缺陷态B。活化能Et估计约为0.3 eV。提出了缺陷B为空穴陷阱的证据。我们认为，缺陷B是Ta2O5中的受主能级，这是因为Si取代了Ta。二次离子质谱仪证实，由于硅从衬底扩散到Ta2O5中，Ta2O5中存在硅污染。
A defect state, defect B, was found in Ta2O5 after postdeposition annealing in O2 by a novel zero‐bias thermally stimulated current spectroscopy technique. The activation energy ET was estimated to be about 0.3 eV. Evidence is given that defect B is a hole trap. We believe that defect B is an acceptor level in Ta2O5 due to Si substituting for Ta. The presence of Si contamination in Ta2O5 due to diffusion of Si from the Si substrate into Ta2O5 was confirmed by secondary‐ion‐mass spectrometry.