Improved hole injection and performance of multilayer OLED devices via electrochemically prepared-polybithiophene layers
Improved hole injection and performance of multilayer OLED devices via electrochemically prepared-polybithiophene layers
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通过电化学制备的聚联噻吩层改善多层 OLED 器件的空穴注入和性能
DOI：
10.1039/b208482c
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
L. Dunsch
中科院分区：
文献类型：
--
作者：
Fapei Zhang;A. Petr;U. Kirbach;L. Dunsch
以2，2‘-联噻吩电聚合制备了形态规整、光滑度高、稳定性好的中性聚联噻吩薄层。这种在ITO阳极上的半导体接触层显著地改善了ITO和萘基取代联苯胺衍生物(NPB)空穴传输层之间的空穴注入。与不含PBT层的NPB/Alq3双层结构相比，带有注入层的气相沉积NPB/Alq3双层器件的工作电压显著降低(约4V)，发光效率和亮度得到提高。研究表明，在气相沉积小分子有机电致发光器件的制备中使用电聚合法是一种提高OLED性能的替代方法。
Stable and neutral polybithiophene (PbT) thin layers with well-defined morphology and a high degree of smoothness have been prepared by electropolymerization of 2,2′-bithiophene. This semiconducting contact layer on an ITO anode improves remarkably hole injection between ITO and the naphthyl-substituted benzidine derivative (NPB) hole-transport layer. Vapor-deposited NPB/Alq3 bilayer devices with the incorporated injection layer show a sharp reduction of the operating voltage (about 4 V), as well as an enhanced luminous efficiency and luminance, compared to the NPB/Alq3 structure without a PbT layer. It is demonstrated that the use of an electropolymerization step in the production of vapor-deposited small molecular OLEDs is an alternative approach to improve the performance of OLEDs.