High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
复制标题
使用双喷头微波激发高密度等离子体设备进行高速无损伤接触孔蚀刻
DOI：
10.1143/jjap.43.1784
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发表时间：
2004
影响因子：
1.5
通讯作者：
T. Ohmi
中科院分区：
文献类型：
--
作者：
T. Goto;H. Yamauchi;Takeyoshi Kato;Masato Terasaki;A. Teramoto;M. Hirayama;S. Sugawa;T. Ohmi
研制了一种双喷头微波激励等离子体刻蚀装置，用于分离等离子体激励区和刻蚀工艺区。以实现无损伤刻蚀为目标，研究了等离子体辐照后掺硼p+-Si的载流子激活。找到了孔不失效的无损伤刻蚀模式，采用高速刻蚀模式和表面无损伤刻蚀模式相结合的表面无损伤刻蚀工艺成功刻蚀出接触孔。与高速模式相比，无损伤蚀刻模式由低自偏置条件和低蚀刻气体流速组成。对于这两种模式，蚀刻器可以保持工艺均匀性，因为蚀刻器可以控制自偏置电压而不改变其他工艺参数。
Dual shower head microwave-excited plasma etching equipment for separating the plasma-excited region from the etching process region has been developed. With the aim of realization of damage-free etching, the carrier activation of boron-doped p+-Si is investigated after plasma irradiation. The damage-free-etching mode in which holes do not deactivate was found. Contact holes are successfully etched using a surface damage-free etching process consisting of high-speed etching mode and surface damage-free etching mode. The damage-free-etching mode consists of low-self-bias condition and a low etching gas flow rate as compared with the high-speed mode. For both modes, the etcher can maintain the process uniformity because the etcher can control self-bias voltages without changing other process parameters.