Control of Charged States of Silicon-Based Quantum Dots and Its Application to Floating Gate MOS Memorie

Control of Charged States of Silicon-Based Quantum Dots and Its Application to Floating Gate MOS Memorie
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硅基量子点带电状态控制及其在浮栅MOS存储器中的应用

DOI:
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发表时间:
2005
期刊:
Abst.of First Int.Workshop on New Group IV Semiconductor Nanoelectronics
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通讯作者:
S.Miyazaki
S.Miyazaki
中科院分区:
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文献类型:
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作者:
S.Miyazaki

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