Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures
Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures
复制标题
硅基碳化硅异质结构闪光灯加工的建模和再生长机制
DOI：
10.1063/1.1786650
复制
发表时间：
2004
影响因子：
3.2
通讯作者：
W. Skorupa
中科院分区：
文献类型：
--
作者：
M. Smith;R. Mcmahon;M. Voelskow;W. Skorupa
本文描述了一种用于在硅衬底上毫秒制闪光灯加工3C-SiC的热模型，即FLASiC工艺。该模型是焓方程的数值解，采用改进的隐式Crank-Nicholson格式，将熔体深度的准确预测与合理的计算次数相结合。该模型已与实验进行了校准，然后用于计算退火过程中晶圆片内的温度分布。结果表明，熔解时间和程度与层厚、晶圆预热温度、脉冲强度和持续时间有关。还考虑了熔解和再生的动力学。
This paper describes the development of a thermal model for flash lamp processing of 3C-SiC on silicon substrates in the millisecond regime, the FLASiC process. The model is a numerical solution of the enthalpy equation, using a modified implicit Crank-Nicholson scheme to combine accurate prediction of melt depths with reasonable computation times. The model has been calibrated against experiments and then used to compute the temperature distribution in the wafer during annealing. The results show the time and extent of melting as a function of layer thickness, wafer preheat temperature, and pulse intensity and duration. The kinetics of melting and regrowth have also been considered.