Self-regulated growth of tilted superlattices by atomic layer epitaxy
Self-regulated growth of tilted superlattices by atomic layer epitaxy
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原子层外延倾斜超晶格的自调控生长
DOI：
10.1063/1.121576
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发表时间：
1998
影响因子：
4
通讯作者：
H. Mariette
中科院分区：
文献类型：
--
作者：
J. Hartmann;M. Charleux;J. Cibert;H. Mariette
我们报告了一种用于倾斜超晶格生长的自我调节方法。它依赖于化合物半导体原子层外延 (ALE) 过程中交替稳定的重建表面。在 CdTe 和 CdMn(Mg)Te 的 ALE 过程中交替形成的 c(2×2)+(2×1) Cd 稳定表面和 (2×1) Te 稳定表面确保了 CdTe 和 CdMn(Mg)Te 的每个 ALE 循环沉积 0.5 个单层的自我调节生长。因此，我们能够克服倾斜超晶格固有的精确通量控制问题。
We report on a self-regulated method for the growth of tilted superlattices. It relies on the reconstructed surfaces alternatively stabilized during the atomic layer epitaxy (ALE) of compound semiconductors. The c(2×2)+(2×1) Cd-stabilized and the (2×1) Te-stabilized surfaces alternatively formed during the ALE of CdTe and CdMn(Mg)Te ensure a self-regulation of the growth at 0.5 monolayer deposited per ALE cycle for both CdTe and CdMn(Mg)Te. We are thus able to overcome the problem of precise flux control inherent to tilted superlattices.