A new built-in self-test (BIST) for a RF low-noise amplifier (LNA)

A new built-in self-test (BIST) for a RF low-noise amplifier (LNA)
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用于射频低噪声放大器 (LNA) 的新型内置自测试 (BI​​ST)

DOI:
10.1109/dtis.2010.5487559
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发表时间:
2010
期刊:
5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era
影响因子:
--
通讯作者:
M. Masmoudi
M. Masmoudi
中科院分区:
--
文献类型:
--
作者:
R. Ayadi;M. Masmoudi

文献摘要

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本文提出了一种用于865-870 MHz低噪声放大器(LNAs)的新型射频内置自检(BIST)电路;BIST和LNA电路采用0.35µm CMOS技术设计。测试电路简单,由一个射频峰值检测器和两个比较器组成,故障覆盖率高。介绍了模拟可能的灾难性故障和参数故障的故障。在LNA中共引入了28个短开故障和10个参数变化,灾难性故障的故障覆盖率为89%,过程变化的故障覆盖率为90%。
In this paper, we present a new RF built-in self test (BIST) circuit for 865–870 MHz low noise amplifiers (LNAs); The BIST and LNA circuit is designed using 0.35µm CMOS technology. The simple circuit of test that contains a RF peak detectors and two comparators brings high fault coverage. The faults simulating possible catastrophic and parametric faults are introduced. A total of twenty eight short and open faults and ten parameters variation have been introduced into the LNA, giving fault coverage of 89% for catastrophic faults and 90% for process variation.