Apparent critical behaviour of sputter-deposited magnetoelectric antiferromagnetic Cr2O3 films near Néel temperature
Apparent critical behaviour of sputter-deposited magnetoelectric antiferromagnetic Cr2O3 films near Néel temperature
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溅射沉积磁电反铁磁 Cr2O3 薄膜在尼尔温度附近的表观临界行为
DOI：
10.1088/1361-6463/aa623e
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
M. Sahashi
中科院分区：
文献类型：
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作者：
M. Al;Y. Shiokawa;S. Pati;S. Ye;T. Nozaki;M. Sahashi
氧化铬（III）是一种具有线性磁电效应的共线反铁磁体。本文测量了Cr_2O_3单晶衬底和500 nm厚薄膜的磁电磁化率α。我们研究了Néel温度附近的磁相变和亚晶格磁化强度的临界指数β。对于薄膜，在低于293 K时发现指数为0.49（1），在接近Néel温度298 K时变为1.06（4）。对于体衬底，指数恒定在0.324（4）。研究了磁电场冷却过程中反铁磁畴反转的几率。对于溅射薄膜，反转概率在298 K以上为零，并且仅在293 K以下稳定。我们将这种行为归因于薄膜生长过程中形成的晶粒，这使得不同的晶粒间和晶粒内的交换耦合能。反转几率与冷却磁场大小的关系可用唯象模型解释。对于体衬底，反转概率在307.6 K的Néel温度下立即稳定。
Chromium(III) oxide is a collinear antiferromagnet with a linear magnetoelectric effect. We are presenting the measurements of the magnetoelectric susceptibility α of a sputter-deposited 500 nm film and a bulk single-crystal substrate of Cr2O3. We investigated the magnetic phase-transition and the critical exponent β of the sublattice magnetization near Néel temperature. For the film, an exponent of 0.49(1) was found below 293 K, and changed to 1.06(4) near the Néel temperature of 298 K. For the bulk substrate, the exponent was constant at 0.324(4). We investigated the reversal probability of antiferromagnetic domains during magnetoelectric field cooling. For the sputtered films, reversal probability was zero above 298 K and stabilized only below 293 K. We attribute this behaviour to formation of grains during film growth, which gives different intergrain and intragrain exchange-coupling energies. The reversal probability dependence on the magnitude of cooling magnetic field could be explained by a phenomenological model. For the bulk substrate, reversal probability was stabilized immediately at the Néel temperature of 307.6 K.
影响因子：
2.1
作者：
Y. Shiratsuchi;T. Fujita;H. Noutomi;H. Oikawa;R. Nakatani
通讯作者：
Y. Shiratsuchi;T. Fujita;H. Noutomi;H. Oikawa;R. Nakatani
DOI：
--
发表时间：
2011
期刊：
影响因子：
--
作者：
T.Miyamoto;T.Iki;K.Sakai;A.Fukuyama;T.Ikari;H.Nakazawa;Yu Shiratsuchi
通讯作者：
Yu Shiratsuchi