Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors

Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors
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DOI：
10.1016/s0921-5107(01)00575-x
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发表时间：
2001-07-05
期刊：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
影响因子：
--
通讯作者：
Hirakawa, K
Hirakawa, K
中科院分区：
其他
文献类型：
--
作者：
Katsumoto, S;Hayashi, T;Hirakawa, K

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报道了III-V基稀磁半导体(Ga，Mn)As和(In，Mn)As的磁性和输运实验。在相对较低的温度下(略高于生长温度)的热处理(退火)出人意料地被发现对改善铁磁性和金属导电性是有效的。红外光导测量和软X射线吸收光谱表明，双交换模型是描述铁磁性的一种方便的模型。利用低温退火法对金属绝缘体临界点附近的输运过程进行了详细的研究。(C)2001 Elsevier Science B.V.保留所有权利。
We report experiments on the magnetism and the transport in III-V based diluted magnetic semiconductors (Ga,Mn)As and (In,Mn)As. Heat treatment (annealing) at comparatively low temperatures (slightly above the growth th temperature) is unexpectedly found to be effective to improve the ferromagnetism and the metallic conduction. IR optical conductivity measurements and soft X-ray absorption spectroscopy reveal that the double exchange model is a convenient picture to describe the ferromagnetism. The transport in the vicinity of metal-insulator critical point was studied in detail by using the low-temperature annealing method. (C) 2001 Elsevier Science B.V. All rights reserved.