Structure of the Ba-induced Si(111)- (3 x 2) reconstruction.
Structure of the Ba-induced Si(111)- (3 x 2) reconstruction.
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Ba 诱导的 Si(111)- (3 x 2) 重建的结构。
DOI：
10.1103/physrevlett.87.056104
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发表时间：
2001
影响因子：
8.6
通讯作者：
D. Moon
中科院分区：
文献类型：
--
作者：
G. Lee;S. Hong;H. Kim;D. Shin;J. Koo;H. I. Lee;D. Moon
Ba/Si（111）表面，以前被称为3 × 1相，被发现具有3 × 2周期性和半导体带隙。基底重构成蜂窝状链通道（HCC）结构，其中Ba原子在通道中，如在碱金属诱导的Si（111）-（3 x 1）中。然而，金属覆盖率被确定为1/6单层，碱金属覆盖率的一半。我们建议的结构和金属覆盖度确定的Ba吸附物是普遍的其他碱土金属吸附物。与碱金属诱导的3 × 1的情况下，我们的研究结果导致一个规则，每3 × 1表面单元的一个捐赠的电子是必要的，以稳定的HCC重建的Si。
The Ba/Si(111) surface, previously known as a 3 x 1 phase, is found to have a 3 x 2 periodicity and a semiconducting band gap. The substrate reconstructs into the honeycomb chain-channel (HCC) structure with Ba atoms in the channel, as in the alkali-metal-induced Si(111)-(3 x 1). However, the metal coverage is determined to be 1/6 monolayers, half the alkali-metal coverage. We propose that the structure and the metal coverage determined for the Ba adsorbate is universal for other alkaline-earth-metal adsorbates. With the alkali-metal-induced 3 x 1 case, our results lead to a rule that one donated electron per 3 x 1 surface unit is necessary to stabilize the HCC reconstruction of Si.