Crystalline Si nanoparticles below crystallization threshold: Effects of collisional heating in non-thermal atmospheric-pressure microplasmas
Crystalline Si nanoparticles below crystallization threshold: Effects of collisional heating in non-thermal atmospheric-pressure microplasmas
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DOI：
10.1063/1.4872254
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发表时间：
2014-04-21
影响因子：
4
通讯作者：
Mariotti, D.
中科院分区：
文献类型：
--
作者：
Askari, S.;Levchenko, I.;Mariotti, D.
成核和生长的高度结晶的硅纳米粒子在大气压下的低温微等离子体中的气体温度远低于硅结晶阈值，并在一个短的时间内（100 μ s）的证明和解释。模拟结果表明，碰撞增强的离子流可以有效地增加纳米颗粒表面的热通量，这种加热是由离子密度控制的。结果表明，纳米粒子可以被加热到结晶阈值以上的温度。这些结合的实验和理论结果证实了在大气压和低气体温度下Si纳米颗粒的有效加热和结构控制。(C)2014 AIP Publishing LLC.
Nucleation and growth of highly crystalline silicon nanoparticles in atmospheric-pressure low-temperature microplasmas at gas temperatures well below the Si crystallization threshold and within a short (100 mu s) period of time are demonstrated and explained. The modeling reveals that collision-enhanced ion fluxes can effectively increase the heat flux on the nanoparticle surface and this heating is controlled by the ion density. It is shown that nanoparticles can be heated to temperatures above the crystallization threshold. These combined experimental and theoretical results confirm the effective heating and structure control of Si nanoparticles at atmospheric pressure and low gas temperatures. (C) 2014 AIP Publishing LLC.