Enhancing electrical conductivity and electron field emissionproperty of free standing diamond films by employing embeddedAg nanoparticles
Enhancing electrical conductivity and electron field emissionproperty of free standing diamond films by employing embeddedAg nanoparticles
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利用嵌入的银纳米颗粒增强自立式金刚石薄膜的导电性和电子场发射性能
DOI：
10.1016/j.matlet.2014.10.119
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发表时间：
2015
影响因子：
3
通讯作者：
Shengwang Yu
中科院分区：
文献类型：
--
作者：
Yanyan Shen;Yu Qiao;Zhiyong He;Shengwang Yu
为了改善自支撑金刚石(FSD)薄膜的导电性和电子场发射(EFE)性能，采用离子注入的方法在FSD薄膜中引入纳米银颗粒(NPs)。由于银纳米粒子提供的导电路径，注入银的FSD薄膜表现出更好的导电性，载流子迁移率为16.2cm2V−1s−1。在电场强度为30nV/μm时，注入银的薄膜的电流密度可达89.6nV/μA/μ~2，并根据F-N方程讨论了提高电场强度的原因。本研究表明，利用嵌入型导电纳米颗粒来改善金刚石的EFE是有意义的。
Ag nanoparticles (NPs) were introduced into free-standing diamond (FSD) film by ion implantation to improve its electrical conductivity and electron field emission (EFE) property. Ag-implanted FSD film exhibits improved conductivity with the carrier mobility of 16.2 cm2V−1s−1, owing to the conductive paths provided by Ag NPs. The EFE behavior of Ag -implanted FSD film can be turned on atE0=18 V/μm, attaining a current density of 89.6 μA/cm2at an applied field of 30 V/μm. The origin of improving the EFE was discussed based on F-N equation. The present study shows the interest of using embedded conductive NPs to improve the EFE of diamond.