On the mechanism of damage buildup in gallium nitride
On the mechanism of damage buildup in gallium nitride
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DOI：
10.1080/10420150.2013.777445
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发表时间：
2013-06-01
影响因子：
1
通讯作者：
Turos, A.
中科院分区：
文献类型：
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作者：
Turos, A.
利用卢瑟福背散射谱/沟道技术、高分辨电子显微镜和高分辨X射线衍射技术研究了离子轰击GaN过程中的损伤积累和缺陷转变。用Ar离子在室温下进行离子轰击。在多步损伤累积模型的框架下，对损伤累积参数进行了估算。揭示了三步损伤累积过程。高分辨X射线衍射谱分析表明，低注量的离子轰击引起晶格参数的增加，从而导致注入区域的应变积累。一旦应力达到临界值，位错滑移引起的塑性变形就会发生，从而形成位错缠结。在这一阶段，沟道产额在远低于非晶化水平时饱和。向非晶化阶段III的转变是在高杂质浓度下发生的，显然是由于缺陷纯度的相互作用。
Damage buildup and defect transformations in ion bombarded in GaN have been studied by the complementary use of Rutherford backscattering spectroscopy/channeling, high-resolution transmission electron microscopy and high-resolution X-ray diffraction (HRXRD) techniques. Ion bombardment was performed at room temperature with Ar ions. Parameters of the damage buildup were evaluated in the frame of the multi-step damage accumulation model. Three step damage accumulation process has been revealed. HRXRD analysis has indicated that ion bombardment to low fluences produces increase of the lattice parameter leading to a strain buildup in the implanted region. Once the critical value of the stress has been attained, plastic deformation due to the dislocation slip takes place leading to the formation of dislocations tangle. At this stage, channeling yield saturates well below the amorphization level. The transition to stage III amorphization takes place at high-impurity concentration and is apparently due to the defectimpurity interaction.