van der Waals heterostructures of germanene, stanene, and silicene with hexagonal boron nitride and their topological domain walls
van der Waals heterostructures of germanene, stanene, and silicene with hexagonal boron nitride and their topological domain walls
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六方氮化硼的锗烯、锡烯和硅烯的范德华异质结构及其拓扑畴壁
DOI：
10.1103/physrevb.93.155412
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Yugui Yao
中科院分区：
文献类型：
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作者：
Maoyuan Wang;Liping Liu;Cheng-Cheng Liu;Yugui Yao
我们研究了由锗烯、斯坦烯或硅烯与六方氮化硼（h-BN）组成的范德华（vdW）异质结构。这些弯曲蜂窝材料的有趣的拓扑特性可以在异质结构中保持和进一步设计，其中衬底效应和外电场之间的竞争可以用来控制可调谐的拓扑相变。利用这些异质结构作为构建块，设计了各种vdW拓扑畴壁（DW），沿其存在谷极化量子自旋霍尔边缘态或谷对比边缘态，这些边缘态受到谷（自旋）分辨拓扑电荷的保护，并可通过异质结的图案化和外场来定制。
We investigate van der Waals (vdW) heterostructures made of germanene, stanene or silicene with hexagonal Boron Nitride (h-BN). The intriguing topological properties of these buckled honeycomb materials can be maintained and further engineered in the heterostructures, where the competition between the substrate effect and external electric fields can be used to control the tunable topological phase transitions. Using such heterostructures as building blocks, various vdW topological domain walls (DW) are designed, along which there exist valley polarized quantum spin Hall edge states or valley-contrasting edge states which are protected by valley(spin)- resolved topological charges and can be tailored by the patterning of the heterojunctions and by external fields.