Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs
Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs
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DOI：
10.1109/led.2015.2487045
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发表时间：
2015-10
影响因子：
4.9
通讯作者：
Hai Jiang;Xiaoyan Liu;N. Xu;Yandong He;G. Du;Xing Zhang
中科院分区：
文献类型：
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作者：
Hai Jiang;Xiaoyan Liu;N. Xu;Yandong He;G. Du;Xing Zhang
本文研究了自加热效应(SHE)对多翅片绝缘体上硅(SOI)FinFET热载流子退化(HCD)的影响。首先，利用交流电导法提取了不同鳍数的SOI FinFET的热阻(Rth)。然后，在源极接地的晶体管的栅极和漏极上同时施加直流和交流应力，以表征HCD。研究发现，翅片数较大的器件表现出SHE引起的高温升高，导致氧化物体陷阱电荷的产生增强。因此，SHE显著加重了HCD。当交流应激频率大于10 MHz时，SHE对HCD的影响减弱。因此，为了在FinFET中准确地预测HCD，必须特别注意HCD上的SHE。
In this letter, the impact of self-heating effect (SHE) on hot carrier degradation (HCD) in multiple-fin silicon-on-insulator (SOI) FinFETs was investigated. First, the ac conductance method has been utilized to extract the thermal resistance (Rth) of SOI FinFETs with different fin numbers. Then, both dc and ac stresses are applied on the gate and drain of transistors with the source grounded to characterize the HCD. It is found that the device with large fin number demonstrates high-temperature rise caused by SHE, which results in the enhanced generation of oxide bulk trapped charges. Thus, the SHE aggravates the HCD significantly. The influence of SHE on HCD is mitigated when the frequency of ac stress is above 10 MHz. Therefore, special attention to the SHE on HCD must be paid for accurate HCD prediction in FinFETs.