Field-Induced Conductance Change of Thin Organic Films Measured using Trench-Type Electrodes

Field-Induced Conductance Change of Thin Organic Films Measured using Trench-Type Electrodes
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使用沟槽型电极测量有机薄膜的场致电导变化

DOI:
10.1143/jjap.42.4535
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发表时间:
2003
影响因子:
1.5
通讯作者:
and Kazuhiro Murata
and Kazuhiro Murata
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
W. Mizutani;K. Tsukagoshi;H. Azehara;and Kazuhiro Murata

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我们利用沟槽型电极研究了有机薄膜的场致电导变化,其中栅场从沟槽的侧壁施加。我们制作了电极,并观察了导电自组装膜和低聚噻吩薄膜的场效应。通过二维有限元法计算了电极结构产生的电场。随着薄膜厚度的减小,栅场强度变弱,而源漏电势产生的场增加。该结果否定了“常关”特性,因为纳米间隙之间的小的源极-漏极电压可能导致对应于大的栅极电压的电导变化。虽然三维结构或界面粗糙度可以提高有效的栅极场,我们推测,显示场效应的自组装膜不是单层的,但最有可能是多层或超过10 nm厚度的聚集分子土丘。
We studied field-induced conductance change of thin organic films using the trench-type electrodes, where the gate field is applied from the sidewall of the trench. We fabricated the electrodes, and observed field effects of a conductive self-assembled film and oligothiophene thin films. The electric field generated by the electrode structure was calculated by a two-dimensional finite element method. The gate field strength becomes weaker as the film thickness is reduced, while the fields generated by the source–drain potential increase. This result denies the `normally-off' characteristics since a small source–drain voltage between the nano-gap could cause the conductance change corresponding to the large gate voltage. Although three-dimensional structures or interface roughness could enhance the effective gate fields, we speculated that the self-assembled film showing the field effects was not a monolayer, but most probably multilayers or mounds of aggregated molecules of more than 10 nm thickness.