InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN
InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN
复制标题
在外延横向过度生长的 GaN 金字塔上生长 InGaN/GaN 量子阱
DOI：
10.1007/s11664-000-0086-4
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发表时间：
2000
影响因子：
2.1
通讯作者：
N. Kobayashi
中科院分区：
文献类型：
--
作者：
X. Zhang;P. Dapkus;D. Rich;I. Kim;J. T. Kobayashi;N. Kobayashi
InGaN/GaN 量子阱 (QW) 通过金属有机化学气相沉积 (MOCVD) 在外延横向过度生长 (ELO) GaN 样品的金字塔上生长。 ELO GaN 样品通过 MOCVD 在蓝宝石 (0001) 衬底上生长，并使用 SiNx 掩模进行图案化。进行扫描电子显微镜和阴极发光 (CL) 成像实验来检查结构和 QW 发光能量的横向变化。 CL 波长成像 (CLWI) 测量表明，与侧壁的 QW 发射相比，凹槽顶部的 QW 峰值发生红移。结果表明，在 QW 生长过程中，In 原子已经迁移到金字塔顶部。还研究了 V/III 比、生长温度以及 ELO GaN 条带取向对 QW 性能的影响。
InGaN/GaN quantum wells (QW) were grown by metalorganic chemical vapor deposition (MOCVD) on pyramids of epitaxial lateral overgrown (ELO) GaN samples. The ELO GaN samples were grown by MOCVD on sapphire (0001) substrates that were patterned with a SiNxmask. Scanning electron microscopy and cathodoluminescence (CL) imaging experiments were performed to examine lateral variations in structure and QW luminescence energy. CL wavelength imaging (CLWI) measurements show that the QW peaks on the top of the grooves are red-shifted in comparison with the QW emission from the side walls. The results show that In atoms have migrated to the top of the pyramids during the QW growth. The effects of V/III ratio, growth temperature as well as ELO GaN stripe orientation on the QW properties are also studied.
影响因子：
3.7
作者：
Whissell PD;Tohyama S;Martin LJ
通讯作者：
Martin LJ