Sensitivity Enhancement of Transmission-line Thin-film Sensor by Using High-permittivity Substrate
Sensitivity Enhancement of Transmission-line Thin-film Sensor by Using High-permittivity Substrate
复制标题
利用高介电常数衬底提高传输线薄膜传感器的灵敏度
DOI：
10.3379/msjmag.1104r015
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发表时间：
2011
影响因子：
--
通讯作者：
K. Arai
中科院分区：
文献类型：
--
作者：
K. Kojima;K. Sato;S. Yabukami;T. Ozawa;N. Kobayashi;K. Arai
我们利用高介电常数陶瓷衬底(Er=115)和非晶态CoNbZr薄膜研制了一种传输线薄膜传感器。研制了厚度为8μm、厚度为25×25 mm的CoNbZr共面线型传感器。实现了150度/Oe的相变，这比以前报道的使用特氟龙衬底的传感器(Er=5)提高了10倍以上。当施加较小的交流磁场(270pT，11 Hz)时，传感器的信噪比得到改善，约为以前传感器的3倍。
We have developed a transmission-line thin-film sensor by using a ceramic substrate with high permittivity (er=115) and amorphous CoNbZr film. We fabricated a coplanar line type sensor with CoNbZr film (25 x 25 mm and 8 μm in thickness). A phase change of 150 degrees/Oe was achieved, which was more than a 10-fold improvement compared with that for a previously reported sensor using a Teflon substrate (er=5). The signal-to-noise ratio improved and was about 3 times higher than that for the previous sensor when a small AC field (270 pT, 11 Hz) was applied.
测量相位差的高频载体薄膜磁传感器的估计
DOI：
--
发表时间：
2004
期刊：
Journal of Magnetic Society of Japan 28
影响因子：
--
作者：
K. Funaki;T. Sueyoshi;K. Kajikawa;M. Iwakuma. K. Tanaka;M. Okada;H. Kumakura;H. Hayashi;T.Ozawa
通讯作者：
T.Ozawa