Single Plasmon Generation in an InAs/GaAs Quantum Dot in a Transfer-Printed Plasmonic Microring Resonator

Single Plasmon Generation in an InAs/GaAs Quantum Dot in a Transfer-Printed Plasmonic Microring Resonator
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转移印刷等离子体微环谐振器中 InAs/GaAs 量子点中的单等离子体激元生成

DOI:
10.1021/acsphotonics.8b01749
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发表时间:
2019
期刊:
影响因子:
7
通讯作者:
Arakawa Yasuhiko
Arakawa Yasuhiko
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
Tamada Akihito;Ota Yasutomo;Kuruma Kazuhiro;Watanabe Katsuyuki;Iwamoto Satoshi;Arakawa Yasuhiko

文献摘要

相似文献

我们报道了用自组装的InAs/GaAs量子点嵌入等离子体微腔产生单等离子体激元。在原子级光滑的银表面上定义了基于GaAs微晶的等离子体腔。我们制作了这种结构的帮助下,转移印刷,这使得复杂的,异构的三维堆栈的取放组装。我们表明,高阶表面等离子体极化激元横模介导的InAs/GaAs量子点和等离子体腔之间的有效耦合,为开发基于最先进的固态量子发射器的等离子体量子光源铺平了道路。在实验上,我们观察到Purcell增强的辐射从量子点耦合到等离子体激元模式。我们还观察到一个强大的反聚束的强度相关直方图测量散射光子从等离子体共振器,表明单等离子体共振器中产生。我们的研究结果是重要的量子等离激元电路集成高性能的单等离激元发生器的发展。
We report single plasmon generation with a self-assembled InAs/GaAs quantum dot embedded in a plasmonic microring resonator. The plasmonic cavity based on a GaAs microring is defined on an atomically smooth silver surface. We fabricated this structure with the help of transfer printing, which enables the pick-and-place assembly of the complicated, heterogeneous three-dimensional stack. We show that a high-order surface-plasmon-polariton transverse mode mediates efficient coupling between the InAs/GaAs quantum dots and the plasmonic cavity, paving the way for developing plasmonic quantum light sources based on the state-of-the-art solid-state quantum emitters. Experimentally, we observed Purcell-enhanced radiation from the quantum dot coupled to the plasmonic mode. We also observed a strong antibunching in the intensity correlation histogram measured for scattered photons from the plasmonic resonator, indicating single plasmon generation in the resonator. Our results are important for the development of quantum plasmonic circuits integrating high-performance single plasmon generators.