Ordered nanowell arrays
Ordered nanowell arrays
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DOI：
10.1021/cm9603314
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发表时间：
1996-12-01
影响因子：
8.6
通讯作者：
Walt, DR
中科院分区：
文献类型：
--
作者：
Pantano, P;Walt, DR
微米和纳米尺寸的威尔斯有序阵列的制造通过化学蚀刻光学成像光纤的远端面。阱深由刻蚀反应时间控制。可以通过使成像光纤的远端尖端变细来增加井填充密度。最小的威尔斯孔的深度为50 nm，半径为125 nm，对应于3 x 10（-18）L体积，填充密度为3.6 x 10（8）威尔斯/cm（2）。有序的纳米孔阵列被用作模板，以制备具有图案化纳米尺寸结构的聚合物膜。
Ordered arrays of micrometer- and nanometer-sized wells were fabricated by chemically etching an optical imaging fiber's distal face. Well depth mas controlled by the etch reaction time. Well packing densities could be increased by tapering the imaging fiber's distal tip. The smallest wells had a 50-nm depth and a 125-nm radius corresponding to a 3 x 10(-18)-L volume and a packing density of 3.6 x 10(8) wells/cm(2). Ordered nanowell arrays were used as templates to emboss polymeric films with patterned nanometer-sized structures.