Gate induced crossover between Fabry-Pérot and quantum dot behavior in a single walled carbon nanotube hole transistor
Gate induced crossover between Fabry-Pérot and quantum dot behavior in a single walled carbon nanotube hole transistor
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单壁碳纳米管孔晶体管中法布里-珀罗和量子点行为之间的栅极诱导交叉
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
K. Matsumoto
中科院分区：
文献类型：
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作者：
T. Kamimura;K. Matsumoto
在单壁碳纳米管空穴晶体管中观察到了栅极诱导的法布里-珀罗和量子点之间的交叉行为。制作了一种既可以作为谐振隧穿晶体管（RTT）工作，又可以作为以单壁碳纳米管为沟道的单孔晶体管（SHT）工作的SWCNT晶体管。当向栅电极施加负高电压时，SWCNT晶体管表现出RTT特性，例如，法布里-珀罗量子干涉图样。然而，当负低电压施加到栅极电极时，SWCNT晶体管显示SHT特性，例如，库仑金刚石特性。RTT和SHT之间的转变是通过使用栅极电压的变化来调制电极和量子岛之间的耦合强度来实现的。在SWCNT和电极之间的接触处的肖特基势垒充当隧穿势垒。隧穿势垒的厚度随栅电压的变化而变化，电极与量子岛之间的耦合强度也随之变化。可转换晶体管的特性可以观察到高达100 K。此外，观察到的沟道长度的依赖性。
Gate induced crossover between Fabry–Perot and quantum dot behavior in a single walled carbon nanotube(SWCNT) hole transistor is observed. The SWCNTtransistor that can operate as a resonant tunnelingtransistor (RTT) and also as a single-hole transistor (SHT) using SWCNT as channel is fabricated. When negatively high voltage is applied to the gate electrode, the SWCNTtransistor shows RTT characteristic, e.g., Fabry–Perot quantum interference pattern. While, when negatively low voltage is applied to the gate electrode, the SWCNTtransistor shows SHT characteristic, e.g., Coulomb diamond characteristic. The transition between RTT and SHT is achieved by modulating the coupling strength between the electrode and the quantum island using gate voltage change. Schottky barriers at the contact between the SWCNT and the electrodes act as tunneling barriers. The thicknesses of the tunneling barriers are modulated by the gate voltage change, and the strength of the coupling between the electrode and quantum island is also changed. The characteristics of the convertible transistor can be observed up to 100 K . Moreover, the channel length dependence is observed.