Extension of the semiclassical theory of current-perpendicular-to-plane giant magnetoresistance including spin flip to any multilayered magnetic structures
Extension of the semiclassical theory of current-perpendicular-to-plane giant magnetoresistance including spin flip to any multilayered magnetic structures
复制标题
将电流垂直于平面的巨磁阻的半经典理论（包括自旋翻转）扩展到任何多层磁结构
DOI：
10.1063/1.1595711
复制
发表时间：
2003
影响因子：
3.2
通讯作者：
B. Dieny
中科院分区：
文献类型：
--
作者：
N. Strelkov;A. Vedyaev;B. Dieny
在金属多层膜中电流垂直于平面（CPP）巨磁阻（GMR）的Valet和Fert理论的框架中[Valet和Fert，B 48，7099（1993）]，CPP电阻和磁阻的计算已经推广到任何多层叠层，包括具有合成自由层的自旋阀、层压自由层和钉扎层以及双自旋阀。该理论考虑了体和界面自旋相关散射以及自旋翻转在所有层。它还考虑了在亚微米多层柱的横向边缘处的散射的效果，其可以被看作是侵入CPP输运的面内电流效应。当柱的直径变为弹性平均自由路径的量级时，后一种效应起作用（即，低于30nm）。在此理论基础上，开发了一个计算程序，可以从堆叠中涉及的每种材料的输运参数（自旋相关的介电常数）计算CPP电阻和CPP磁阻。
In the framework of the Valet and Fert theory of current perpendicular to plane (CPP) giant magnetoresistance (GMR) in metallic multilayers [Valet and Fert, Phys. Rev. B 48, 7099 (1993)], the calculation of the CPP resistance and magnetoresistance has been generalized to any multilayered stacks including spin valves with synthetic free layers, laminated free and pinned layers, and dual spin valves. The theory takes into account bulk and interfacial spin-dependent scattering as well as spin flip in all layers. It also considers the effect of scattering at lateral edges of submicron multilayered pillars which can be viewed as a current in plane effect intruding on CPP transport. This latter effect plays a role when the diameter of the pillar becomes of the order of the elastic mean-free paths (i.e., below ∼30 nm). Based on the theory, a code has been developed to compute the CPP resistance and CPP magnetoresistance from the transport parameters of each material involved in the stack (spin-dependent resistiv...