Estimating the Reliability of Series-Connected Schottky Diodes for High-Frequency Rectification

Estimating the Reliability of Series-Connected Schottky Diodes for High-Frequency Rectification
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评估用于高频整流的串联肖特基二极管的可靠性

DOI:
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发表时间:
2018
期刊:
影响因子:
0.7
通讯作者:
J. Rivas
J. Rivas
中科院分区:
工程技术4区
文献类型:
--
作者:
Sanghyeon Park;G. Zulauf;J. Rivas

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提出了一种预测高频反向偏置下串联二极管过电压故障率的方法。传统的方法是使用平衡电容器来确保串联二极管在高频下的可靠性。相反,我们研究了仅通过其结电容之间的匹配来实现器件之间电压平衡的可行性。没有额外平衡元件的串行二极管增加了阻塞电压并降低了电容,允许在高频率下进行高压转换,用于x射线等应用。我们测量了结电容的统计特性,以估计串联的2、3和4二极管的反向电压极限。预测的故障率与实验结果吻合较好。
This paper presents a method to predict the overvoltage failure rate of diodes connected in series under high-frequency reverse bias. Conventional approaches use balancing capacitors to ensure the reliability of series-connected diodes at high frequency. Instead, we investigate the viability of achieving voltage balance between devices solely by the match between their junction capacitances. Serializing diodes without extra balancing components increases the blocking voltage and decreases the capacitance, allowing high-voltage conversion at high frequencies for applications such as X-ray. We measure statistical properties of junction capacitances to estimate the reverse voltage limit of 2, 3, and 4 diodes in series. The predicted failure rate shows a good agreement with experimental results.