Temperature Dependence of Field-Emission Characteristics from a p-Type Si Single Emitter with Real Surface
Temperature Dependence of Field-Emission Characteristics from a p-Type Si Single Emitter with Real Surface
复制标题
真实表面 p 型硅单发射极场发射特性的温度依赖性
DOI：
10.1143/jjap.40.4197
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发表时间：
2001
影响因子：
1.5
通讯作者：
N. Yokogawa
中科院分区：
文献类型：
--
作者：
T. Yoshimoto;T. Iwata;S. Kikuchi;N. Yokogawa
研究了具有真实的表面的p型硅单发射极场发射电流的温度依赖性。发射器的场发射图案没有显示出任何对称性，这表明表面的清洁晶体结构;然而，获得了通常从清洁p型Si发射器观察到的log（I/V2）vs 1/V图（F-N图）中的高度非线性特性。在固定的外加电压下，F-N曲线（Isat）的缓坡区域的发射电流显示出强烈的温度依赖性。log Isat对1/T曲线的斜率给出0.58 eV的活化能。最可能的结论是费米能级被钉扎在表面的带隙的中间，并且从表面态到导带产生的电子被发射。
The temperature dependence of field-emission current from a p-type Si single emitter with a real surface was investigated. The field emission pattern of the emitter did not show any symmetry which indicates a clean crystal structure of the surface; however, the highly nonlinear characteristics in log (I/V2) vs 1/V plots (F-N plots) commonly observed from a clean p-type Si emitter are obtained. The emission current at the gentle slope region of F-N plots (Isat) shows strong temperature dependence at a fixed applied voltage. The slope of log Isat vs 1/T plots gives an activation energy of 0.58 eV. The most probable conclusion is that the Fermi level is pinned at the middle of the band gap of the surface and electrons generated from the surface state to the conduction band are emitted.