Advances and Future Prospects of Spin-Transfer Torque Random Access Memory
Advances and Future Prospects of Spin-Transfer Torque Random Access Memory
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DOI：
10.1109/tmag.2010.2042041
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发表时间：
2010-06-01
影响因子：
2.1
通讯作者：
Visscher, P. B.
中科院分区：
文献类型：
--
作者：
Chen, E.;Apalkov, D.;Visscher, P. B.
自旋转移矩随机存取存储器（STT-RAM）是一种潜在的革命性通用存储器技术，它结合了DRAM的容量和成本优势、SRAM的快速读写性能、闪存的非易失性以及基本上无限的耐久性。为了实现小单元尺寸、高速度和实现功能齐全的STT-RAM芯片，用作核心存储和读出元件的MgO势垒磁性隧道结（MTJ）必须满足一组关于开关电流密度、电压、磁阻比（MR）、电阻面积积（RA）、热稳定因子（Delta）、开关电流分布、读取电阻分布和可靠性。在本文中，我们报告的进展，我们的工作在器件设计，材料改进，晶圆加工，与CMOS集成，并测试示范STT-RAM测试芯片，和预测STT-RAM的未来特性建模的基础上。
Spin-transfer torque random access memory (STT-RAM) is a potentially revolutionary universal memory technology that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM, the non-volatility of Flash, and essentially unlimited endurance. In order to realize a small cell size, high speed and achieve a fully functional STT-RAM chip, the MgO-barrier magnetic tunnel junctions (MTJ) used as the core storage and readout element must meet a set of performance requirements on switching current density, voltage, magneto-resistance ratio (MR), resistance-area product (RA), thermal stability factor (Delta), switching current distribution, read resistance distribution and reliability. In this paper, we report the progress of our work on device design, material improvement, wafer processing, integration with CMOS, and testing for a demonstration STT-RAM test chip, and projections based on modeling of the future characteristics of STT-RAM.