Atomic Force Microscopy Investigation of Noble Gas Ion Bombardment on InP: Effect of Ion Energy
Atomic Force Microscopy Investigation of Noble Gas Ion Bombardment on InP: Effect of Ion Energy
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惰性气体离子轰击 InP 的原子力显微镜研究：离子能量的影响
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
R. Odendaal
中科院分区：
文献类型：
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作者：
C. Demanet;K. V. Sankar;J. Malherbe;N. V. D. Berg;R. Odendaal
镜面抛光的InP(100) 样品，n 掺杂S 原子至4 x 10 18 cm -3 ，用氖、氩和氪离子轰击。离子的能量在 0.5-5 keV 范围内变化，入射角与样品法线成 41° 恒定。 Ne + 的离子剂量密度为1.8×10 16 ions cm -2 ，Ar + 和Kr + 的离子剂量密度为5×10 18 ions cm -2 。使用5 x 10 13 ions cm -2 s -1 的低离子电流密度来最小化样品加热。通过原子力显微镜（AFM）研究了由此产生的形貌发展。使用 AFM 软件根据 RMS（均方根）粗糙度对形貌发展进行量化，并将其作为轰击离子能量的函数进行分析。原子力显微照片显示了某些特定离子能量的各种类型的形貌。对于每种离子种类，都有一个临界能量，使表面粗糙度达到最大值。
Mirror-polished InP(100) samples, n-doped with S atoms to 4 x 10 18 cm -3 , were bombarded with neon, argon and krypton ions. The energy of the ions was varied from 0.5-5 keV at a constant angle of incidence at 41° with respect to the sample normal. The ion dose density for Ne + was 1.8 x 10 16 ions cm -2 and for Ar + and Kr + was 5 x 10 18 ions cm -2 . A low ion current density of 5 x 10 13 ions cm -2 s -1 was used to minimize sample heating. The resulting topography development was investigated by atomic force microscopy (AFM). The topography development was quantified in terms of RMS (root-mean-square) roughness using the software of the AFM and analysed as a function of the energy of the bombarded ions. Atomic force micrographs showing various types of topography for some specific ion energies are presented. For each ion species there is a critical energy for which the surface roughness attains a maximum value.