A Method to Maximize the Amplitude of Generated Terahertz Pulse From LT GaAs Photoconductive Semiconductor Switch
A Method to Maximize the Amplitude of Generated Terahertz Pulse From LT GaAs Photoconductive Semiconductor Switch
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DOI：
10.1109/tps.2014.2343520
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发表时间：
2015-01
影响因子：
1.5
通讯作者：
S. Ray;A. Alla;Sabiha Naz;F. Alnahwi;N. Islam;Abdurrahman Al-Aufi
中科院分区：
文献类型：
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作者：
S. Ray;A. Alla;Sabiha Naz;F. Alnahwi;N. Islam;Abdurrahman Al-Aufi
为了确定器件中产生最大太赫兹脉冲幅值所需的条件，研究了砷化镓光导开关的衬底特性。特别地，研究了衬底材料的特性，如陷阱密度、捕获截面、决定场的陷阱占用、复合速率和影响低温生长砷化镓半绝缘材料中脉冲上升时间的光产生。结果表明，当两个极性的载流子都对终端电流有贡献时，脉冲幅值达到最大值，此时的电压称为双注入电压（DIV）。给定器件的DIV直接取决于衬底特性以及电极的接近程度。
The substrate characteristics of GaAs photoconductive switch has been studied in order to determine the conditions required to generate maximum terahertz pulse amplitude in the device. In particular, the substrate material characteristics, such as trap density, capture cross sections, trap occupancy that determine fields, recombination rate, and photogeneration that influence the pulse rise-time in a low temperature grown gallium arsenide semiinsulating material, are studied. Results show that maximum pulse amplitude occurs when the carriers of both polarities contribute to the terminal currents, and the voltage at this point is referred to as the dual injection voltage (DIV). DIV for a given device is directly dependent on the substrate properties as well as the proximity of the electrodes.