High current density in light-emitting transistors of organic single crystals
High current density in light-emitting transistors of organic single crystals
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DOI：
10.1103/physrevlett.100.066601
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发表时间：
2008-02-15
影响因子：
8.6
通讯作者：
Iwasa, Yoshihiro
中科院分区：
文献类型：
--
作者：
Takenobu, Taishi;Bisri, Satria Zulkarnaen;Iwasa, Yoshihiro
我们测量了由有机单晶制成的发光场效应晶体管（LET）的外部电致发光量子效率（eta（ext）），发现在双极输运区，eta（ext）在高达数百A/cm（2）电流密度范围内没有劣化，这比传统有机发光二极管所实现的大2个数量级。目前的结果表明，单晶有机LET是一种有前途的器件结构，是免费的各种非辐射损失，如激子附近的电极和激子湮灭的解离。
We measured the external electroluminescence quantum efficiency (eta(ext)) in light-emitting field-effect transistors (LETs) made of organic single crystals and found that, in the ambipolar transport region, eta(ext) is not degraded up to several hundreds A/cm(2) current-density range, which is 2 orders of magnitude larger than that achieved in conventional organic light-emitting diodes. The present result indicates the single-crystal organic LET is a promising device structure that is free from various kinds of nonradiative losses such as exciton dissociation near electrodes and exciton annihilations.