Strain-Induced Pseudo-Magnetic Fields Greater Than 300 Tesla in Graphene Nanobubbles
Strain-Induced Pseudo-Magnetic Fields Greater Than 300 Tesla in Graphene Nanobubbles
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DOI：
10.1126/science.1191700
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发表时间：
2010-07-30
期刊：
影响因子：
56.9
通讯作者：
Crommie, M. F.
中科院分区：
文献类型：
--
作者：
Levy, N.;Burke, S. A.;Crommie, M. F.
最近的理论建议表明，应变可以用来通过创建伪磁场来设计石墨烯电子状态。这种效应对于石墨烯来说是独特的，因为它具有无质量的狄拉克费米子带结构和特殊的晶格对称性（C-3v）。在这里，我们提出了实验光谱测量的高度应变的纳米气泡时，石墨烯生长在铂（111）表面上形成的扫描隧道显微镜。纳米气泡表现出朗道能级，其在大于300特斯拉的应变诱导伪磁场的存在下形成。这种巨大的伪磁场的展示为以前无法达到的高磁场状态下的电荷载流子的研究和对石墨烯中电子结构的故意机械控制或所谓的“应变工程”打开了大门。"
Recent theoretical proposals suggest that strain can be used to engineer graphene electronic states through the creation of a pseudo-magnetic field. This effect is unique to graphene because of its massless Dirac fermion-like band structure and particular lattice symmetry (C-3v). Here, we present experimental spectroscopic measurements by scanning tunneling microscopy of highly strained nanobubbles that form when graphene is grown on a platinum (111) surface. The nanobubbles exhibit Landau levels that form in the presence of strain-induced pseudo-magnetic fields greater than 300 tesla. This demonstration of enormous pseudo-magnetic fields opens the door to both the study of charge carriers in previously inaccessible high magnetic field regimes and deliberate mechanical control over electronic structure in graphene or so-called "strain engineering."