Broadband enhancement of local density of states using silicon-compatible hyperbolic metamaterials
Broadband enhancement of local density of states using silicon-compatible hyperbolic metamaterials
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DOI：
10.1063/1.4922874
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发表时间：
2015-06
影响因子：
4
通讯作者：
Yu Wang;H. Sugimoto;S. Inampudi;A. Capretti;M. Fujii;L. D. Negro
中科院分区：
文献类型：
--
作者：
Yu Wang;H. Sugimoto;S. Inampudi;A. Capretti;M. Fujii;L. D. Negro
将通过胶体合成的发光硅量子点均匀地旋涂成20 nm厚的膜，并沉积在交替的TiN和SiO2亚波长层的双曲超材料的顶上。使用稳态和时间分辨的光致发光光谱作为发射波长的函数，与严格的电磁模型的偶极发射，我们展示了增强的局域态密度和耦合到高k模式在一个广泛的光谱范围。这些发现为新型Si兼容宽带源的工程设计提供了一种替代方法，该方法利用双曲超材料中的辐射跃迁控制和广泛Si平台的灵活性。
Light emitting silicon quantum dots by colloidal synthesis were uniformly spin-coated into a 20 nm-thick film and deposited atop a hyperbolic metamaterial of alternating TiN and SiO2 sub-wavelength layers. Using steady-state and time-resolved photoluminescence spectroscopy as a function of the emission wavelength in partnership with rigorous electromagnetic modeling of dipolar emission, we demonstrate enhanced Local Density of States and coupling to high-k modes in a broad spectral range. These findings provide an alternative approach for the engineering of novel Si-compatible broadband sources that leverage the control of radiative transitions in hyperbolic metamaterials and the flexibility of the widespread Si platform.