Coulomb peak shifts under terahertz-wave irradiation in carbon nanotube single-electron transistors
Coulomb peak shifts under terahertz-wave irradiation in carbon nanotube single-electron transistors
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DOI：
10.1063/1.2430078
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发表时间：
2007-01
影响因子：
4
通讯作者：
T. Fuse;Y. Kawano;Masaki Suzuki;Y. Aoyagi;K. Ishibashi
中科院分区：
文献类型：
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作者：
T. Fuse;Y. Kawano;Masaki Suzuki;Y. Aoyagi;K. Ishibashi
作者研究了太赫兹辐射对基于单壁碳纳米管的单电子晶体管（SET）的影响，并观察到辐射产生库仑峰位移。太赫兹响应的时间分辨测量表明，峰移信号具有非常长的时间常数（以秒为单位测量），并且太赫兹辐射关闭后信号的时间轨迹偏离单指数曲线。这些实验结果表明，太赫兹辐射会导致 SET 附近的陷阱态发生充电过程，从而导致其有效栅极电压发生变化。
The authors have studied the effect of terahertz irradiation on single-electron transistors (SETs) based on single-wall carbon nanotubes, and have observed that the radiation generates Coulomb peak shifts. Time-resolved measurements of the terahertz response have revealed that the peak-shift signal has very long time constants, measured in seconds, and that the time trace of the signal after the terahertz irradiation is turned off deviates from a single-exponential curve. These experimental results suggest that the terahertz irradiation causes a charging process in trap states in the close vicinity of the SET, leading to a change in its effective gate voltage.