New type cryogenic thermometer using sputtered Zr‐N films
New type cryogenic thermometer using sputtered Zr‐N films
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采用溅射Zr-N薄膜的新型低温温度计
DOI：
10.1063/1.98459
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发表时间：
1987
影响因子：
4
通讯作者：
J. Yamamoto
中科院分区：
文献类型：
--
作者：
T. Yotsuya;M. Yoshitake;J. Yamamoto
利用溅射Zr - N薄膜研制了一种低温专用的新型薄膜温度计。Zr‐N温度计在300到2k甚至更低的温度范围内具有很高的灵敏度，并且具有足够快的响应速度来检测超流氦中的第二声。研究发现，所研制的温度计对磁场不敏感。在4.2 K时，施加高达6 T的磁场所引起的温度误差仅小于4.5 mK。
A new type thin‐film thermometer using sputtered Zr‐N films especially for cryogenic temperature range has been developed. Zr‐N thermometers have high sensitivity in a wide temperature region from 300 to 2 K or even lower, and have a response quick enough to detect the second sound in superfluid helium. It is found that the developed thermometers are insensitive to magnetic field. Temperature error induced by application of magnetic field up to 6 T is only less than 4.5 mK at 4.2 K.