Amorphous silicon produced by a new thermal chemical vapor deposition method using intermediate species SiF2
Amorphous silicon produced by a new thermal chemical vapor deposition method using intermediate species SiF2
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采用中间体 SiF2 的新型热化学气相沉积法生产非晶硅
DOI：
10.1063/1.96000
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发表时间：
1985
影响因子：
4
通讯作者：
H. Tachibana
中科院分区：
文献类型：
--
作者：
H. Matsumura;H. Tachibana
采用一种新的热化学气相沉积方法，在约320 °C的温度下制备了非晶硅薄膜。在该方法中，中间物种SiF2和H2的混合气体经催化反应热分解后作为原料气。结果表明，当AM1值为100mW/cm~2时，a-Si薄膜的光敏性超过10~6，而以几个A/S的速率沉积的a-Si薄膜的自旋密度仅为1.5×10~(16)cm·−~3。
Amorphous silicon (a‐Si) films are deposited at about 320 °C by a new thermal chemical vapor deposition method. In this method, the gas mixture of intermediate species SiF2 and H2, decomposed thermally by the catalytic reaction, is used as a material gas. It is found that the photosensitivity of the a‐Si film for AM1 of 100 mW/cm2 exceeds over 106 and that the spin density is as low as 1.5×1016 cm−3 for the film deposited with a rate of several A/s.