Nucleation-Control and Enhancement of Solid-Phase-Crystallization of SiGe-Heterostructure
Nucleation-Control and Enhancement of Solid-Phase-Crystallization of SiGe-Heterostructure
复制标题
SiGe异质结构的成核控制和固相结晶增强
DOI：
10.1557/proc-638-f14.12.1
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
N. Sugii
中科院分区：
文献类型：
--
作者：
S. Yamaguchi;Seong;N. Sugii
本文研究了在Si层之间夹一层Ge层的SiGe异质结构的晶化过程。当Ge层位于Si层内部时，晶化现象与SiGe合金层相似，Ge在晶化过程中完全扩散到Si层中。当Ge层位于Si层与石英衬底的界面处时，由于表面自由能的降低，界面处的成核速率增大，Ge层在界面处的反常局域化现象明显增强。当Ge层位于Si层表面时，其晶化特性与其它结构有很大不同。当炉退火由激光退火辅助时，下面的Si层具有大的且排列的晶粒。这项工作的一部分是在日本NEDO支持的ASET方案下进行的。
The crystallization of SiGe-heterostructure in which a thin Ge layer put between Si layers has been investigated. When the Ge layer is inside the Si layer, the crystallization phenomena are similar to those of SiGe alloy layer; Ge completely diffuses in Si layer during the crystallization. When the Ge layer is at the interface between the Si layer and the quartz substrate, significant enhancement of crystallization has been found. In this structure, decrease in surface free-energy increases the nucleation rate at the interface and causes anomalous localization of Ge at the interface. When the Ge layer is on the surface of the Si layer, the crystallization property is quite different from the other structures. The underlying Si layer has large and aligned grains when the furnace annealing is assisted by the laser-annealing. A part of this work was carried out under the ASET program supported by NEDO, Japan.