Planar interstitial aggregates in Si
Planar interstitial aggregates in Si
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Si 中的平面间隙聚集体
DOI：
10.1088/0953-8984/14/48/324
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
S. Öberg
中科院分区：
文献类型：
--
作者：
J. Goss;T. Eberlein;R. Jones;N. Pinho;A. Blumenau;T. Frauenheim;P. Briddon;S. Öberg
硅聚集体中的自间隙形成沿[110]方向排列并位于{111}或{113}晶体平面的棒状缺陷。已知这些系统具有电和光学活性。本文给出了{113}、{111}和{001}平面内候选结构的结构和能量学的第一性原理计算结果，并与实验结果进行了比较。
Self-interstitials in silicon aggregate to form rod-like defects aligned along [110] directions and inhabiting either {111} or {113} crystallographic planes. These systems are known to be electrically and optically active. We present the results of first-principles calculations on the structure and energetics for candidate structures contained within the {113}, {111} and {001} planes and compare the results with experiment.