N-type doping of an electron-transport material by controlled gas-phase incorporation of cobaltocene
N-type doping of an electron-transport material by controlled gas-phase incorporation of cobaltocene
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DOI：
10.1016/j.cplett.2006.09.034
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发表时间：
2006-11-11
影响因子：
2.8
通讯作者：
Kahn, Antoine
中科院分区：
文献类型：
--
作者：
Chan, Calvin K.;Amy, Fabrice;Kahn, Antoine
利用紫外、x射线、逆光发射光谱和电流-电压测量，研究了电子传输材料三（噻吩）六氮杂三苯基衍生物(1)与强还原分子双（环戊二烯基）-钴（II）（钴二烯，CoCp2）的n掺杂。冷凝的CoCp2薄膜显示出4 eV的电离能，这对于真空沉积的分子材料来说是非常低的，这表明钴二烯很有希望作为一种分子n掺杂剂。CoCp2对1的有效n掺杂得到了证实：费米能级向主体的未占据态移动了0.56 eV，在化合物I与钴二烯界面掺杂的器件中电流增加了3个数量级。(c) 2006 Elsevier B.V.版权所有
N-doping of an electron-transport material, a tris(thieno)hexaazatriphenylene derivative (1), with the strongly reducing molecule bis(cyclopentadienyl)-cobalt(II) (cobaltocene, CoCp2), is investigated using ultra-violet, X-ray, and inverse photoemission spectroscopies, and current-voltage measurements. Condensed CoCp2 films show a 4 eV ionization energy, which is unusually low for vacuum-deposited molecular material and suggests that cobaltocene is promising as a molecular n-dopant. Efficient n-doping of 1 by CoCp2 is confirmed by a 0.56 eV shift of the Fermi level toward the unoccupied states of the host, and by a three orders of magnitude current increase in devices where compound I is interfacially doped with cobaltocene. (c) 2006 Elsevier B.V. All rights reserved.