Kinetics of oxygen surfactant in Cu(001) homoepitaxial growth
Kinetics of oxygen surfactant in Cu(001) homoepitaxial growth
复制标题
Cu(001)同质外延生长中氧表面活性剂的动力学
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
Keikichi G. Nakamura
中科院分区：
文献类型：
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作者：
M. Yata;H. Rouch;Keikichi G. Nakamura
在Cu（001）-（2 <$2 × <$2）-O上进行同质外延生长时，O原子向表面偏聚，保留了（2 <$2 × <$2）表面。Cu表面吸附氧原子的存在抑制了Cu吸附原子的表面扩散，通过Cu吸附原子与吸附氧原子之间的位置交换进行生长，提高了生长模式从阶梯流到逐层生长的转变温度。存在一个临界铜沉积速率，超过该速率，氧原子不能与铜吸附原子交换位置。Cu的临界沉积速率服从Arrhenius关系，位交换的活化能估计为0.66eV。
O atoms segregate to the surface during Cu homoepitaxial growth on Cu(001)-(2√2×√2)-O to retain the (2√2×√2) surface. The presence of adsorbed O atoms on the Cu surface suppresses the surface diffusivity of Cu adatom and the growth proceeds by site-exchange between Cu adatoms and adsorbed O atoms, which heightens the transition temperature of the growth mode from step-flow to layer-by-layer. There exists a critical Cu deposition rate above which the O atoms can not exchange the site with Cu adatoms. The critical Cu deposition rate obeys an Arrhenius relation and the activation energy for the site-exchange is estimated at 0.66eV.