Magnetic field tuning of hot electron resonant capture in a semiconductor device
Magnetic field tuning of hot electron resonant capture in a semiconductor device
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半导体器件中热电子共振捕获的磁场调谐
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
R. Airey
中科院分区：
文献类型：
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作者：
S. Spasov;G. Allison;A. Patané;A. Ignatov;L. Eaves;D. Maude;M. Hopkinson;R. Airey
我们研究了在高达23T的强磁场下，稀氮化镓(AsN)合金中共振N杂质的热电子俘获。我们发现，当电场和磁场之比达到一个临界值时，传导电子的轨迹在实空间中完全局域化，这导致了负的微分电导和电流不稳定可由磁场调节。
We study hot-electron capture on resonant N-impurities in the dilute nitride Ga(AsN) alloy under high magnetic fields up to 23T. We show that when the ratio of electric and magnetic fields reaches a critical value, the trajectory of conduction electrons becomes fully localized in real space; this leads to a negative differential conductance and current instabilities tuneable by magnetic field.