Effects of optical coupling in III-V multilayer systems
Effects of optical coupling in III-V multilayer systems
复制标题
III-V 多层系统中光耦合的影响
DOI：
10.1063/1.2737927
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发表时间：
2007
影响因子：
4
通讯作者：
A. Bett
中科院分区：
文献类型：
--
作者：
C. Baur;M. Hermle;F. Dimroth;A. Bett
提出了一种利用III-V族多层膜系统中的光耦合效应来研究化合物半导体材料中辐射复合过程的方法。为此目的，感兴趣的半导体材料生长在激活的锗（Ge）衬底上，然后将其用作光电二极管。通过Ge光电二极管的光谱响应测量，可以检测来自上层的响应信号。通过实验和建模证明，来自这些层的信号只能由光学传输机制来解释，即，辐射复合
A method to visualize and investigate radiative recombination processes in compound semiconductor materials by utilizing the effect of optical coupling in III-V multilayer systems is presented. For this purpose, a semiconductor material of interest is grown on an activated germanium (Ge) substrate which then serves as a photodiode. By means of spectral response measurements of the Ge photodiode, a response signal from the upper layers can be detected. It is proven both by experiment and by modeling that the signals from these layers can only be explained by optical transport mechanisms, i.e., radiative recombination.