Cascade type-I quantum well diode lasers emitting 960 mW near 3 μm
Cascade type-I quantum well diode lasers emitting 960 mW near 3 μm
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级联 I 型量子阱二极管激光器，在 3 μm 附近发射 960 mW
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
R. Tober
中科院分区：
文献类型：
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作者：
L. Shterengas;R. Liang;G. Kipshidze;T. Hosoda;G. Belenky;S. Bowman;R. Tober
在室温下，级联抽运方案使高功率I型量子阱GaSb基λ <$3 μm半导体激光器的阈值电流密度降低到100 A/cm 2。激光异质结构具有通过GaSb/AlSb/InAs隧道结随后是InAs/AlSb电子注入器串联连接的单个GaInAsSb量子阱增益级。具有密集堆叠的两级和三级增益级以及100 μ m宽孔径的器件的峰值功率转换效率为16%，连续波输出功率为960 mW。相应的窄脊激光器显示出高于100 mW的输出功率。实验结果表明，增益带宽及其随电流的增长率强烈地依赖于分隔电子注入层和量子威尔斯层的AlSb层的厚度。讨论了电子注入界面和电离杂质对有源量子阱中载流子散射和复合的可能影响。
The cascade pumping scheme reduced the threshold current density of high power type-I quantum well GaSb-based λ ∼ 3 μm diode lasers down to ∼100 A/cm2 at room temperature. Laser heterostructures had single GaInAsSb quantum well gain stages connected in series by means of GaSb/AlSb/InAs tunnel junctions followed by InAs/AlSb electron injectors. Devices with densely stacked two and three gain stages and 100-μm-wide aperture demonstrated peak power conversion efficiency of 16% and continuous wave output power of 960 mW. Corresponding narrow ridge lasers demonstrated above 100 mW of output power. The experiment showed that the bandwidth of the gain and its rate of increase with current depended strongly on the thickness of AlSb layer separating electron injectors from quantum wells. The possible impact of electron injector interfaces and ionized impurities on the carrier scattering and recombination in the active quantum well is discussed.