Atomic Imaging, Atomic Processing and Nanocharacterization of CuInSe2 Using Proximal Probe Techniques
Atomic Imaging, Atomic Processing and Nanocharacterization of CuInSe2 Using Proximal Probe Techniques
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使用近端探针技术对 CuInSe2 进行原子成像、原子处理和纳米表征
DOI：
10.7567/jjaps.32s3.25
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发表时间：
1993
影响因子：
1.5
通讯作者：
L. Kazmerski
中科院分区：
文献类型：
--
作者：
L. Kazmerski
缺陷在决定单晶和多晶CuInSe_2的电光性质中起着主导作用。本文研究了这种铜三元半导体中点缺陷和晶界缺陷的基本性质，并首次提供了缺陷化学的直接证据。特殊的扫描探针显微镜(SPM)技术用于对样品的相同区域进行实时原子成像、原子处理(单原子操作)和纳米级表征。对(220)-三元p-Rype表面进行了检查和成像。使用组合的脉冲电场(SPM针尖表面)和单波长光子场来产生铜、铟和硒空位，以实现选定的单原子移除。使用基于扫描探针显微镜的纳米光致发光和纳米阴极发光技术来检测这些缺陷(在产生之前和之后)的电光特性，这两种技术在相同的纳米区域中提供信息。根据这些首次给出直接原子水平关联的数据，比较和解释了整体光致发光光谱。此外，通过在空位上放置相同类型的单个本征原子来修复这些点缺陷是使用原子处理技术完成的。电子缺陷能级得到了验证，并与原子尺度的观测结果相关联。最后，对施主和受主缺陷，即Cu和Se空位，In位(CuIn)和Se位(SECU)进行了分析、评价和表征。还研究了受主杂质氧在Se空位上的位置。这既是在孤立的Se空位上完成的，也是在沿着电子活性晶界的空位上完成的。利用纳米电子束感应电流(NEBIC)和最新发展的基于SPM的少数载流子谱技术对这些区域的钝化(通过晶界的p型掺杂)进行了评估。本文首次报道了这些缺陷在原子尺度上的工程化，并用纳米尺度电光表征方法对原子操纵的直接评价补充了这些结果。
Defects play a dominant role in the determination of the electro-optical properties of single-crystal and polycrystalline CuInSe2. This paper examines the fundamental nature of point and grain boundary defects in this Cu-ternary semiconductor and, for the first time, provides direct evidence underlying the defect chemistry. Special scanning probe microscopy (SPM) techniques are used for real-time atomic imaging, atomic processing (single-atom manipulation), and nanoscale characterization of the same regions of the sample. The (220)-tri-elemental, p-rype surfaces are examined and imaged. Cu-, In-, and Se-vacancies are created using combined, pulsed electric (SPM tip-surface), and single-wavelength photon fields for selected, single-atom removal. The electro-optical characteristics of these defects (before and after creation) are examined using SPM-based nano-photoluminescence and nano-cathodoluminescence techniques that provide information in the same nanometer regime. Bulk photoluminescence spectra are compared and interpreted with respect to these data that give first time direct, atomic-level correlations. In addition, the healing of these point defects by the placement of single intrinsic atoms of the same type at the vacancy sites is accomplished using the atomic processing techniques. The electronic defect levels are verified and correlated with the atomic-scale observations. Finally, donor and acceptor defects, Cu and Se vacancies, Cu at In sites (CuIn) and Se at Cu sites (SeCu), are created, evaluated, and characterized. The placement of the acceptor heteroimpurity oxygen at Se vacancies is also examined. This is done both at isolated Se vacancies and at vacancies along electronically active grain boundaries. The passivation of these regions (by p-type doping of the grain boundary) is evaluated using nanoscale electron-beam induced-current (NEBIC), and newly-developed, SPM-based minority-carrier spectroscopy techniques. This paper reports, for the first time, the engineering of these defects on the atomic scale, and complements these results with the direct evaluation of the atomic manipulations using nanoscale electro-optical characterization methods.