Highly Reliable MTJ-Based Nonvolatile Logic-in-Memory LSI with Content-Aware Write Error Masking Scheme
Highly Reliable MTJ-Based Nonvolatile Logic-in-Memory LSI with Content-Aware Write Error Masking Scheme
复制标题
高度可靠的基于 MTJ 的非易失性内存逻辑 LSI,具有内容感知写入错误屏蔽方案
DOI:
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发表时间:
2016
期刊:
影响因子:
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通讯作者:
and T. Hanyu
中科院分区:
文献类型:
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作者:
M. Natsui;A. Tamakoshi;T. Endoh;H. Ohno;and T. Hanyu