Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene
Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene
复制标题
DOI：
10.1021/nl204481s
复制
发表时间：
2012-06-01
期刊：
影响因子：
10.8
通讯作者：
Hone, James
中科院分区：
文献类型：
--
作者：
Petrone, Nicholas;Dean, Cory R.;Hone, James
虽然化学气相沉积（CVD）有望成为生产大面积石墨烯的可扩展方法，但CVD生长的石墨烯迄今为止与剥离的样品相比表现出较差的电子性质。在这里，我们测试CVD生长的石墨烯的电输运特性，其中两个重要的无序源，即晶界和加工引起的污染，大大减少。我们生长的CVD石墨烯的晶粒尺寸高达250 μ m，以减少晶界，我们转移石墨烯利用一种新的，干转移方法，以尽量减少化学污染。我们在二氧化硅和六方氮化硼（h-BN）衬底上制作器件，以探测衬底引起的无序的影响。在这两种基板类型上，大晶粒CVD石墨烯样品在质量上与报道的最佳剥离样品相当，如通过低温电输运和磁输运测量所确定的。从多个指标来看，小颗粒样品的质量变化要大得多，性能也较差，即使是在表现出高场效应迁移率的样品中也是如此。这些结果证实了基于可扩展的合成工艺实现高性能石墨烯器件的可能性。
While chemical vapor deposition (CVD) promises a scalable method to produce large-area graphene, CVD-grown graphene has heretofore exhibited inferior electronic properties in comparison with exfoliated samples. Here we test the electrical transport properties of CVD-grown graphene in which two important sources of disorder, namely grain boundaries and processing-induced contamination, are substantially reduced. We grow CVD graphene with grain sizes up to 250 mu m to abate grain boundaries, and we transfer graphene utilizing a novel, dry-transfer method to minimize chemical contamination. We fabricate devices on both silicon dioxide and hexagonal boron nitride (h-BN) dielectrics to probe the effects of substrate-induced disorder. On both substrate types, the large-grain CVD graphene samples are comparable in quality to the best reported exfoliated samples, as determined by low-temperature electrical transport and magnetotransport measurements. Small-grain samples exhibit much greater variation in quality and inferior performance by multiple measures, even in samples exhibiting high field-effect mobility. These results confirm the possibility of achieving high-performance graphene devices based on a scalable synthesis process.