Conductive and Non-conductive Dislocations in Bi-Sb Topological Insulators
Conductive and Non-conductive Dislocations in Bi-Sb Topological Insulators
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DOI：
10.7566/jpsj.89.023703
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发表时间：
2020-02-15
影响因子：
1.7
通讯作者：
Edagawa, Keiichi
中科院分区：
文献类型：
--
作者：
Hamasaki, Hiromu;Tokumoto, Yuki;Edagawa, Keiichi
电阻率测量进行了塑性变形的Bi Sb拓扑绝缘体，以调查形成的一维无隙态沿着位错，这是以前已经讨论过的理论。使用微米尺寸的样品进行测量，以研究局部位错密度和电阻率之间的相关性。制备了两种不同变形取向的样品，其中一种样品中引入的位错满足形成无带隙导电态的理论条件，而另一种样品中引入的位错不满足形成无带隙导电态的理论条件。与未变形样品相比，前者在低于50 K的低温区电阻率显著降低，这可能是由于一维导电沿着位错所致。
Electrical resistivity measurements were performed for plastically deformed Bi Sb topological insulators to investigate the formation of one-dimensional gapless states along dislocations, which has been previously discussed theoretically. Micrometer-sized samples were used for the measurements, so as to investigate the correlation between local dislocation density and electrical resistivity. Two types of samples with different deformation orientations were prepared; the dislocations introduced in one type satisfy the theoretical condition for the formation of gapless conductive states while those in the other do not. The former type of samples exhibited much reduced resistivity in a low temperature region below 50 K, compared with the latter or undeformed samples, which can be attributed to one-dimensional conduction along dislocations.