Observations of dislocations in β-silicon nitride
Observations of dislocations in β-silicon nitride
复制标题
β-氮化硅中位错的观察
DOI：
10.1080/14786437108217052
复制
发表时间：
1971
影响因子：
1.6
通讯作者：
E. Butler
中科院分区：
文献类型：
--
作者：
E. Butler
用透射电子显微镜观察了室温下断裂产生的含位错β Si_3N_4箔。位错位于{1010}上，并且具有Burgers矢量c [0001]的近边缘取向。考虑了可见性判据在β Si_3N_4位错中的应用。
Abstract Foils of βSi3N4 containing dislocations generated as a result of fracture at room temperature have been examined by transmission electron microscopy. The dislocations have been show to lie on {1010} and to be near edge orientation with a Burgers vector c [0001]. The application of visibility criteria to dislocations in βSi3N4 is considered.